f eatures plastic material used carries underwriters laboratory classifications 94v-0 metal silicon junction, majority carrier conduction low power loss, high efficiency high current capability, low forward voltage drop high surge capability for use in low voltage, high frequency inverters, free wheeling, and polarity pr otection applications guardring for overvoltage protection high temperature soldering guaranteed: 260 o c/10 seconds,0.25?(6.35mm)from case m echanical data cases: jedec to-220a molded plastic body terminals: lead solderable per mil-std-750, method 2026 polarity: as marked mounting position: any mounting torque: 5 in. - lbs. max weight: 0.08 ounce, 2.24 grams m aximum ratings and elect rical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol mbr 1030 ct mbr 1035 ct mbr 1040 ct mbr 1045 ct mbr 1050 ct mbr 1060 ct mbr 1010 0ct mbr 1015 0ct mbr 1020 0ct unit s maximum recurrent peak reverse voltage v rrm 30 35 40 45 50 60 100 150 200 v maximum rms voltage v rms 21 24 28 31 35 42 70 105 140 v maximum dc blocking voltage v dc 30 35 40 45 50 60 100 150 200 v maximum average forward rectified current at tc=125 o c i (av) 10 a peak repetitive forward current (rated v r , square wave, 20khz) at tc=125 o c i frm 32 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 120 a peak repetitive reverse surge current (note 1) i rrm 0.5 a maximum instantaneous forward voltage at: (note 2) i f =5a, t c =25 o c i f =5a, t c =125 o c v f 0.70 0.57 0.80 0.65 0.8 2 0.7 2 0.8 4 0.7 4 0. 86 0. 76 v maximum instantaneous reverse current @ tc =25 at rated dc blocking voltage (note 2) i r 0.1 0.8 0.2 ma voltage rate of change (rated v r ) dv/dt 10,000 v/us maximum typical thermal resistance (note 3) r jc 1.5 /w operating junction temperature range t j -65 to +150 storage temperature range t stg -65 to +175 notes: 1. 2.0us pulse width, f=1.0 khz 2. pulse test: 300us pulse width, 1% duty cycle 3. thermal resistance from junction to case per leg , mount on heatsink size of 2 in x 3 in x 0.25in al-plate. http://www.luguang.cn mail:lge@luguang.cn mbr1030ct thru mbr10200ct 1 3 2 pi n 16 . 5 0. 3 10. 2 0. 2 1 5 .0 0 .5 4. 0 0. 3 1 3 .5 0 .5 2. 6 0. 1 5 1. 4 0 . 1 0. 6 0. 1 4. 5 0 . 2 3. 1 +0 . 2 -0 . 1 |? 3 . 3 0 . 1 ?3 . 2 0 . 2 8. 2 0. 2 2. 6 0 . 2 0. 6 0. 1 ito-220ab dimensions in millimeters
fig.2- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 0.1 10 100 180 150 120 90 60 30 0 number of cycles at 60hz fig.3- typical instantaneous forward characteristics instantaneous for ward current . (a) 0.6 0.8 1.0 1.1 0.9 0.7 0.5 0.4 0.3 0.2 0.1 0 1.2 0.1 0.01 1 10 40 forward voltage. (v) fig.4- typical reverse characteristics instantaneous reverse current .(ma) 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage. (%) 0.001 0.1 0.01 1 10 50 fig.6- typical transient thermal characteristics per leg transient thermal impedance. ( c/w) o 1 0.01 0.1 10 100 0.1 10.0 1 100 t, pulse duration. (sec) fig.5- typical junction capacitance junction cap acitance.(pf) 0.1 1.0 10 100 100 1,000 5,000 reverse voltage. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 fig.1- forward current derating curve average for ward current . (a) 0 50 100 150 6 5 4 3 2 1 0 case temperature. ( c) o resistive or inductive load pulse width=300 s 1% duty cycle 500 tj=tj max. 8.3ms single half sine-wave jedec method mbr10200ct MBR10150CT mbr10100ct mbr1050ct-mbr1060ct mbr1030ct-mbr1045ct tj=25 c 0 tj=75 c 0 tj=125 c 0 tj=25 c 0 http://www.luguang.cn mail:lge@luguang.cn mbr1030ct thru mbr10200ct
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